Copper-containing C4 ball-limiting metallurgy stack for enhanced reliability of packaged structures and method of making same

ABSTRACT

The invention relates to a ball-limiting metallurgy stack for an electrical device that contains at least one copper layer disposed upon a Ti adhesion metal layer. The ball-limiting metallurgy stack resists Sn migration toward the upper metallization of the device.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. patent application Ser. No.12/655,975 filed Jan. 12, 2010, which is a Continuation of U.S. patentapplication Ser. No. 11/366,957 filed Mar. 1, 2006, now abandoned, whichis a Divisional of U.S. patent application Ser. No. 10/776,448, filedFeb. 10, 2004, now issued as U.S. Pat. No. 7,250,678, which is aDivisional of U.S. patent application Ser. No. 09/961,034, now issued asU.S. Pat. No. 6,853,076.

BACKGROUND OF THE INVENTION

Field of the Invention

An embodiment of the present invention relates generally to integratedcircuit fabrication. More particularly, an embodiment of the presentinvention relates to electrical connection technology. In particular, anembodiment of the present invention relates to a ball-limitingmetallurgy comprising a copper layer.

Description of Related Art

Electrical bump connectors such as metal bumps or balls are used inflip-chip applications that may include controlled collapse (C4)flip-chip applications. As the progress of miniaturization continues,the junction between a microelectronic device metallization and theelectrical bump becomes increasingly large relative to the mass of theelectrical bump. Consequently, junction disparities have an increasinglydetrimental effect on electrical communication between the device andthe electrical bump. One junction disparity relates to migration of theflip-chip tin, typically from Sn37Pb solder, toward the metallization.Another consequence of miniaturization is stress that builds up in theball-limiting metallurgy due to the formation of tin-containingintermetallic structures between the metallization and the electricalbump.

BRIEF DESCRIPTION OF THE DRAWINGS

In order that the manner in which embodiments of the present inventionare obtained, a more particular description of the invention brieflydescribed above will be rendered by reference to specific embodimentsthereof which are illustrated in the appended drawings. Understandingthat these drawings depict only typical embodiments of the inventionthat are not necessarily drawn to scale and are not therefore to beconsidered to be limiting of its scope, the invention will be describedand explained with additional specificity and detail through the use ofthe accompanying drawings in which:

FIG. 1 is an elevational cross-section of a semiconductor structure thatreveals metallization;

FIG. 2 is an elevational cross-section of the semiconductor structuredepicted in FIG. 1 after patterning of a passivation layer;

FIG. 3 is an elevational cross-section of the semiconductor structuredepicted in FIG. 2 after further processing;

FIG. 4 is an elevational cross-section of the semiconductor structuredepicted in FIG. 3 after further processing;

FIG. 5 is an elevational cross-section of the semiconductor structuredepicted in FIG. 4 after further processing;

FIG. 6 is an elevational cross-section of the semiconductor structuredepicted in FIG. 5 after further processing;

FIG. 7 is an elevational cross-section of the semiconductor structuredepicted in FIG. 6 after further processing;

FIG. 8 is an elevational cross-section of the semiconductor structuredepicted in FIG. 7 after further processing;

FIG. 9 is an elevational cross-section of the semiconductor structuredepicted in FIG. 8 after further processing;

FIG. 10 is an elevational cross-section of the semiconductor structuredepicted in FIG. 7 after further processing according to an alternativeprocess flow;

FIG. 11 is an elevational cross-section of the semiconductor structuredepicted in FIG. 10 after further processing;

FIG. 12 is an elevational cross-section of an alternative semiconductorstructure embodiment;

FIG. 13 is an elevational cross-section of the semiconductor structuredepicted in FIG. 12 after further processing;

FIG. 14 is an elevational cross-section of the semiconductor structuredepicted in FIG. 13 after further processing;

FIG. 15 is an elevational cross-section of the semiconductor structuredepicted in FIG. 14 after further processing;

FIG. 16 is an elevational cross-section of the semiconductor structuredepicted in FIG. 13 after further processing; and

FIG. 17 is a chart that describes a process flow embodiment.

DETAILED DESCRIPTION OF THE INVENTION

An embodiment of the present invention relates to a ball-limitingmetallurgy (BLM) stack that facilitates miniaturization, that obviatesthe effects of tin migration from the flip-chip package into themetallization, and that resists electrical discontinuities betweenmetallization and metal bumps. In one embodiment, a metal first layer isdisposed above and on the metallization. A copper metal second layer isdisposed above and on the metal first layer, and a metal third layer isdisposed over the copper metal second layer. The metal third layer ispreferably a non-ferroelectric metal alloy or doped metal. Anelectrically conductive bump is disposed above and on the metal thirdlayer.

In another embodiment, a metal first layer is disposed above and on themetallization. A metal second layer is disposed above and on the metalfirst layer. The metal second layer is preferably a non-ferroelectricmetal alloy or doped metal. A copper metal third layer is disposed overthe metal second layer. An electrically conductive bump is disposedabove and on the copper metal third layer.

In another embodiment, a metal first layer is disposed above and on themetallization. A copper metal second layer is disposed above and on themetal first layer. A copper stud is disposed over the metal secondlayer. An electrically conductive bump is disposed above and on thecopper stud.

The following description includes terms, such as upper, lower, first,second, etc. that are used for descriptive purposes only and are not tobe construed as limiting. The embodiments of an apparatus or article ofthe present invention described herein can be manufactured, used, orshipped in a number of positions and orientations.

Reference will now be made to the drawings wherein like structures willbe provided with like reference designations. In order to show thestructures of embodiments of the present invention most clearly, thedrawings included herein are diagrammatic representations of integratedcircuit structures. Thus, the actual appearance of the fabricatedstructures, for example in a photomicrograph, may appear different whilestill incorporating the essential structures of embodiments of thepresent invention. Moreover, the drawings show only the structuresnecessary to understand embodiments of the present invention. Additionalstructures known in the art have not been included to maintain theclarity of the drawings.

FIG. 1 is a cross-section of a semiconductor structure 10 duringfabrication that includes a substrate 12 and a metallization 14 such asa copper pad that makes connection to what is commonly referred to asmetal six (M6) by way of non-limiting example. Metallization 14 may becoplanar with an upper surface 16 of substrate 12 where substrate 12 maybe an interlayer dielectric (ILD) composition. A nitride layer 18 isformed over substrate 12 and metallization 14. Additionally, apassivation layer 20 is formed over nitride layer 18. Passivation layer20 and nitride layer 18 act to protect substrate 12 and to exposemetallization 14 according to the patterning. Passivation layer 20 maybe a polyimide material or it may be an inorganic material such as asilicon oxide that is formed by the decomposition of tetraethyl orthosilicate (TEOS). Patterning is accomplished by use of a first mask (notpictured) to form a recess 22 during an etch process.

FIG. 2 illustrates a patterned passivation structure, that includesportions of former nitride layer 18 and passivation layer 20, and thatexposes a portion of metallization 14. The process may be carried out byblanket forming nitride layer 18 and passivation layer 20, patterning,etching recess 22, and curing passivation layer 20 where passivationlayer 20 is a polyimide. After the cure, passivation layer 20 has formeda slope 24 that may have an angle, in a range from about 30° to about60°, and preferably about 45°.

FIG. 3 illustrates further processing that is carried out wherepatterned passivation layer 20, patterned nitride layer 18, andmetallization 14 are covered with a metal first layer 26. Metal firstlayer 26 may be a refractory metal such as titanium, zirconium, hafnium,and the like. Other refractory metals for metal first layer 26 mayinclude nickel, cobalt, palladium, platinum, and the like. Otherrefractory metals for metal first layer 26 may include chromium,molybdenum, tungsten, and the like. Other refractory metals for metalfirst layer 26 may include scandium, yttrium, lanthanum, cerium, and thelike. One preferred property embodiment may be a metal first layer 26that exhibits sufficient adhesion to the metallization 14 that liftoffor spalling thereof will not occur during fabrication, test, andordinary field use.

In a first general embodiment, metal first layer 26 is titanium (Ti)that is formed by physical vapor deposition (PVD) to a thickness in arange from about 500 Å to about 4,000 Å, and preferably about 2,000 Å.In another embodiment, metal first layer 26 is chromium (Cr) that isformed by PVD to a thickness in a range from about 500 Å to about 4,000Å, and preferably about 2,000 Å. In another embodiment, metal firstlayer 26 is tungsten (W) that is formed by PVD to a thickness in a rangefrom about 500 Å to about 4,000 Å, and preferably about 2,000 Å. Inanother embodiment, metal first layer 26 is titanium-tungsten (TiW) thatis formed by PVD to a thickness in a range from about 500 Å to about4,000 Å, and preferably about 2,000 Å. In each embodiment, metal firstlayer 26 is sputtered under conditions that put it under a compressivestress. Such sputtering conditions are known in the art.

FIG. 4 illustrates further processing in which metal first layer 26 iscovered with a metal second layer 28. Metal second layer 28 is formed byPVD according to known technique. In one embodiment, metal second layer28 is sputtered copper and is sputtered under conditions to impart acompressive stress therein. Such conditions are known in the art. Metalsecond layer 28 may have a thickness in a range from about 1,000 Å toabout 5,000 Å, preferably from about 1,500 Å to about 4,000 Å, and morepreferably about 2,000 Å.

In this embodiment, where metal second layer 28 is sputtered copper, ametal third layer 30 comprises a refractory metal that is also sputterdeposited. FIG. 5 illustrates further processing in which a metal thirdlayer 30 is formed over the sputtered copper of metal second layer 28.Metal third layer 30 may preferably be a refractory metal, a refractorymetal alloy, or a doped refractory metal. The refractory metal alloy orthe doped metal may be in stoichiometric or solid solution ratios. Inone embodiment, metal third layer 30 is a vanadium-alloyed orvanadium-doped metal of at least one metal selected from nickel, cobalt,palladium, platinum, and the like. The vanadium may be added where therefractory metal may be ferroelectric. In one embodiment, metal thirdlayer 30 is a metal, a vanadium-alloyed, or vanadium-doped metal of atleast one selected from titanium, zirconium, hafnium, and the like. Inanother embodiment, metal third layer 30 is a metal, a vanadium-alloyed,or vanadium-doped metal of at least one selected from chromium,molybdenum, tungsten, and the like. In another embodiment, metal thirdlayer 30 is a metal, a vanadium-alloyed, or vanadium-doped metal of atleast one selected from scandium, yttrium, lanthanum, cerium, and thelike.

In one embodiment, metal third layer 30 is a refractory metal, arefractory metal-vanadium alloy, or vanadium-doped metal that is formedby PVD to a thickness in a range from about 1,000 Å to about 5,000 Å,preferably from about 1,500 Å to about 4,000 Å, and more preferablyabout 2,000 Å. In one embodiment, metal third layer 30 is a NiV alloy.In another embodiment, metal third layer 30 is a vanadium-doped nickellayer.

Although sputtering of the three metal layers 26-30 may be anembodiment, evaporation deposition of compositions such as anorganometallic materials may also be used as is known in the art.

In an alternative embodiment, metal third layer 30, is nitrided to forma nitrided metal alloy or a nitrided vanadium-doped metal as set forthherein. Nitriding conditions may be carried out according to knowntechnique for nitridation of metals. In selected embodiments, metalthird layer 30 is a nitrided refractory metal-vanadium alloy or anitrided, vanadium-doped refractory metal. In other selectedembodiments, metal third layer 30 is a nitrided NiV alloy or a nitridedvanadium-doped nickel metal.

In a second general embodiment, metal first layer 26 is titanium (Ti)that is formed by PVD as set forth herein. Metal third layer 30comprises copper that is sputtered according to conditions as set forthherein. Metal third layer 30 is formed by PVD according to knowntechnique. In one embodiment, metal third layer 30 is sputtered copperand is sputtered under conditions to impart a compressive stresstherein. Such conditions are known in the art. Metal third layer 30 mayhave a thickness in a range from about 1,000 Å to about 5,000 Å,preferably from about 1,500 Å to about 4,000 Å, and more preferablyabout 2,000 Å.

In this embodiment, where metal third layer 30 is sputtered copper, themetal second layer 28 comprises a refractory metal that is also sputterdeposited. Accordingly, where metal third layer 30 is sputtered copper,metal second layer 28 is a refractory metal. As set forth in the firstgeneral embodiment, metal second layer 28 is processed under conditionsthat are similar or equivalent to the formation of metal third layer 30where metal second layer 28 is sputtered copper. Metal second layer 28may preferably be a NiV alloy or V-doped Ni metal as set forth herein.Further, metal second layer 28 may preferably be a nitrided NiVcomposition as set forth herein.

Similarly, although sputtering of the three metal layers 26-30 may be anembodiment where metal third layer 30 is copper, evaporation depositionof compositions such as an organometallic materials may also be used asis known in the art.

According to the first and second general embodiments, following theformation of the three metal layers 26-30 as set forth herein,processing may continue by plating a bump precursor over thethree-metal-layer stack. Plating may be electroless plating orpreferably electroplating as is known in the art.

FIG. 6 illustrates further processing in which a second mask 32 ispatterned to expose metal third layer 30 where the exposure issubstantially centered over metallization 14. Second mask 32 isperipherally patterned because a plating process is carried out to platea bump precursor that adheres to metal third layer 30.

FIG. 7 illustrates further processing in which a bump precursor button34 has been plated over metal third layer 30 through second mask 32.Plating may be carried out by electroless plating techniques or byelectroplating techniques as is known in the art. Preferably, by way ofnon-limiting example, electroplating is carried out to form bumpprecursor button 34 as a discrete structure that is spaced-apart fromany closest neighboring bump precursors. Accordingly, bump precursorbutton 34 may have a curvilinear perimeter (not pictured) and acurvilinear vertical profile. Alternatively, a plating film may beblanket formed and subsequently patterned into substantially discretebump precursor structures by a process such as an etch. Accordingly, thepatterned bump precursor structure may have a rectilinear perimeter (notpictured) and a rectilinear vertical profile (also not pictured). In anyevent, bump precursor button 34 or a patterned bump precursor structure(not depicted) may be selected from a solder composition thatfacilitates embodiments.

Bump precursor button 34 may be a tin-lead solder. In selectedembodiments, bump precursor button 34 is a tin-lead solder compositionsuch as Sn97Pb. A tin-lead solder composition that may be used with asubstrate that is to be flip-chip mounted over semiconductor structure10 is a Sn37Pb composition. In any event, bump precursor button 34 maybe a tin-lead solder comprising Sn_(x) Pb_(y), wherein x+y total 1, andwherein x is in a range from about 0.3 to about 0.99. Preferably, thebump precursor button 34 is a tin-lead solder composition of Sn97Pb, andsubstrate solder for forming the flip-chip bond is a tin-lead soldercomposition of Sn37Pb.

FIG. 8 illustrates further processing in which the three metal layers28-30 are removed substantially everywhere except directly under bumpprecursor button 34. Second mask 32 may be simultaneously removed, or itmay be preliminarily or subsequently removed such as by wet stripping orby ashing. Removal of lateral portions of the three metal layers 26-30may be carried out by a wet etch that is substantially selective to theelectrically conductive bump precursor button 34, and to patternedpassivation layer 20 and patterned nitride layer 18. Although someundercutting 36 into the three metal layers 26-30 beneath bump precursorbutton 34 may be desirable, it may be balanced against risking a totalslumping of the solder during reflow. In one embodiment, undercutting 36may be in a range from about 0.5 micrometers (microns) to about 6microns, preferably about 3 microns.

FIG. 9 illustrates further processing in which the bump precursor button34 has been reflowed into a solder ball 38 that has been dimensionallylimited by the metallurgy of the metal layers 26-30 and by the degree ofundercutting as set forth herein. Hence the BLM of an embodiment maycause sufficient wetting of solder ball 38 onto metal third layer 30 toform a solder ball 38 that has a preferred shape and height. In selectedembodiments, the vertically measured diameter of solder ball 38 may bein a range from about 50 microns to about 200 microns. In anotherembodiment, the major vertical dimension of bump precursor button 34 isabout 57 microns before it is reflowed, and it is about 100 micronsafter it is reflowed.

The eccentricity (the vertical diameter divided by the horizontaldiameter) of solder ball 38 may be in a range from about 0.5 to about1.2. A lower eccentricity may be preferred where the pitch of a givenball array would lead to a bridging problem between neighboring ballsduring reflow or during reflow flip-chip mounting. Eccentricity may becontrolled by solder ball amount and solder ball wetting properties inrelation to metal third layer 30.

Because some intermetallic material may form between the solder ball 38and metallization 14, the metal layers 26-30 act to prevent excessiveintermetallic formation, and to resist tin migration towardmetallization 14. FIG. 9 illustrates an intermetallic zone 40, in anarbitrary shape and size, that may form under ordinary processingconditions according to an embodiment. Where the metallurgy of solderball 38 is Sn_(x) Pb_(y) or the like, a nickel-tin intermetallic zone 40may form that may be restricted by the BLM configuration according toembodiments set forth herein.

As set forth herein, certain thicknesses of the metal layers 26-30 arepreferred to control formation of intermetallic material. The metallayers should not be too thin individually so that the BLM stack isconsumed. Otherwise, during the temperature cycling, once the BLM stackis consumed, the intermetallic that forms, segregates and forms shapesthat may move upward into the solder. Consequently, volume changes thatcorrespond with notable amounts of intermetallic formation may causesignificant stress in the electrical structure. In various embodiments,the copper absorbs and combines with significant amounts of tin thatmigrates from the solder ball 38. Consequently, significant consumptionof migrating tin into the copper layer is accomplished, whether it ismetal second layer 28 or metal third layer 30.

Processing of undercut 36 may be controlled by specific etch conditionsfor removal of the metal layers 26-30. For example, second mask 32 maybe removed by any means such as wet stripping or ashing, and amulti-process etch may be carried out to remove lateral portions of thethree metal layers 26-30 as depicted in FIG. 10. In a first process, ananisotropic etch is carried out where bump precursor button 34, out tothe tip 42 thereof, acts as a shadow mask. FIG. 10 illustrates shadowmask etching wherein second mask 32 is removed except where it isshadow-protected by tip 42 of bump precursor button 34. Similarly,removal of the metal layers 28-30 has occurred, preferably by a secondetch, except where bump precursor button 34 acts as a shadow mask. Next,second mask 32 is wet stripped. Thereafter, a wet etch is carried out toremove excess metal layer material to achieve a structure similar towhat is depicted in FIG. 8. Alternatively, the wet etch recipe may beconfigured to simultaneously remove second mask 32.

In a third alternative, processing is carried out similar to what isdepicted as being processed in FIG. 11. After the anisotropic etchprocess or processes of some of second mask 32 and some of the metallayers 26-30 is completed as depicted in FIG. 10, an isotropic wet etchis carried out. The isotropic wet etch laterally etches the metal layers26-30 to form metal layers 26-30 similar to what is depicted in FIG. 8.The etch recipe is selective to various structures including passivationlayer 24, what is left of second mask 32 by the shadow-mask effect ofbump precursor button 34, and bump precursor button 34 itself.Thereafter, wet stripping, ashing, or another removal technique known inthe art is carried out to remove what is left of second mask 32.Thereby, undercutting 36 (FIG. 8) of the metal layers 26-30 iscontrolled by the presence of what is left of second mask 32 andexcessive or disproportional undercutting into refractory metal upperlayer 30 is resisted.

The following is a first process example that relates to semiconductorstructure 10 as depicted in FIGS. 1-11. A substrate 12 containing an M6metallization and a metallization 14 bond pad is provided. Substrate 12contains a silicon oxide ILD material as is known in the art. A nitridelayer 18 and a passivation layer 20 are formed over substrate 12 andmetallization 14. Passivation layer 20 is a polyimide layer that isformed according to known technique and that cures with an angle 24 thatis about 45°. Thereafter, a photoresist first mask (not pictured) isspun on, cured, exposed, and patterned to form a recess 22. Etching ofpassivation layer 20 and nitride layer 18 is carried out in a dry etchthat exposes metallization 14.

A metal first layer 26 is formed by PVD of Ti over substrate 12 andstructures supported thereon. Metal first layer 26 is about 2,000 Å.Next, a copper metal second layer 28 is formed by PVD over metal firstlayer 26. Copper metal second layer 28 is about 2,000 Å. A metal thirdlayer 30 is formed by PVD of a NiV alloy over copper metal second layer28. Metal third layer 30 is about 2,000 Å. Nitriding of metal thirdlayer 30 is carried under thermal processing conditions.

After the formation of the three metal layers 26-30, a photoresistsecond mask 32 is spun on, cured, exposed, and patterned according toknown technique. Patterning of second mask 32 exposes metal third layer30 directly above metallization 14. Thereafter, an electroplatingsolution that has tin and lead in a Sn97Pb proportion is applied oversubstrate 12 until a bump precursor button 34 has been formed. Next, ananisotropic etch is carried out by the shadow mask technique thatremoves portions of second mask 32 and that stops on refractory metalupper metal layer 30. A follow-up anisotropic etch is carried out thatremoves lateral portions of the three metal layers according to theshadow-mask technique set forth herein. Finally, a wet third etch iscarried out that undercuts 36 the remaining portions of second mask 32until a preferred dimension of a BLM stack of the three metal layers26-30 remains. Second mask 32 is removed by a wet stripping process.Thereafter, a thermal process acts that reflows bump precursor button 34to form a solder ball 38.

The following is a second process example that relates to semiconductorstructure 10 as depicted in FIGS. 1-11. In this process example, thesame processing is carried out as in the first process example, with thealteration that metal second layer 28 is a NiV composition as set forthherein that is sputtered and nitrided. Thereafter, metal second layer 28and covered with a copper metal third layer 30 by sputtering copper.

FIG. 12 represents processing of a third general embodiment of thepresent invention. Similar to fabrication of semiconductor structure 10depicted in FIGS. 1-9, a semiconductor structure 110 is formed where themetal third layer comprises a copper stud.

Semiconductor structure 110 includes a substrate 112 and a metallization114 such as a copper pad that makes connection to an M6 by way ofnon-limiting example. Metallization 114 may be disposed upon an uppersurface 116 of substrate 112 where substrate 112 may be an interlayerdielectric (ILD) composition. A patterned passivation layer 120 and apatterned nitride layer 118 are formed over substrate 112 andmetallization 114. A metal first layer 126 is disposed over patternedpassivation layer 124 and metallization 114. Metal first layer 126 maybe a refractory metal such as titanium, zirconium, hafnium, and thelike. Other refractory metals for metal first layer 126 may includenickel, cobalt, palladium, platinum, and the like. Other refractorymetals for metal first layer 126 may include chromium, molybdenum,tungsten, and the like. Other refractory metals for metal first layer126 may include scandium, yttrium, lanthanum, cerium, and the like. Onepreferred property embodiment may be a metal first layer that exhibitssufficient adhesion to the metallization that liftoff or spallingthereof will not occur during fabrication, test, and ordinary field use.Such examples are Cr, TiW, and W.

In one embodiment, metal first layer 126 is Ti that is formed by PVD toa thickness in a range from about 500 Å to about 4,000 Å, and preferablyabout 2,000 Å. In another embodiment, metal first layer 126 is Cr thatis formed by PVD to a thickness in a range from about 500 Å to about4,000 Å, and preferably about 2,000 Å. In another embodiment, metalfirst layer 126 is W that is formed by PVD to a thickness in a rangefrom about 500 Å to about 4,000 Å, and preferably about 2,000 Å. Inanother embodiment, metal first layer 126 is TiW that is formed by PVDto a thickness in a range from about 500 Å to about 4,000 Å, andpreferably about 2,000 Å.

Metal first layer 126 is covered with a copper metal second layer 128.Copper metal second layer 128 is formed by PVD according to knowntechnique that imparts a compressive stress therein. Copper metal secondlayer 128 may have a thickness in a range from about 500 Å to about4,000 Å, preferably about 2,000 Å. Although sputtering of the metallayers 126 and 128 may be a preferred embodiment, evaporation depositionof a compositions such as organometallic materials may also be used asis known in the art.

After the formation of copper metal second layer 128, a second mask 130is formed from a photoresist that is spun on, cured, exposed, andpatterned. Thereafter, a copper stud 132 is formed in the patterning ofsecond mask 130 in order to make contact with copper second layer 128.Copper stud 132 may be formed by electroplating or by electrolessplating according to known technique. Preferably, copper stud 132 has athickness in a range from about 5 microns to about 15 microns, and morepreferably about 10 microns. Under certain applications, a 10-micronthick copper stud 132 may provide sufficient excess copper to absorbmigrating tin from either the solder ball of semiconductor structure 110that will be formed, or from solder ball of a flip chip. One preferredmetal stack comprises metal first layer 126 of Ti at about 2,000 Å,copper metal second layer 128 of Cu at about 2,000 Å, and copper stud132 of Cu at about 10 microns.

Following the formation of the metal layers 126-132 as set forth herein,processing may continue by plating a bump precursor over thethree-metal-layer stack similar to semiconductor structure 10 depictedin FIGS. 6-11 according to various process flow embodiments. FIG. 13illustrates further processing in which a bump precursor button has beenplated over copper stud 132 through second mask 130. Plating may becarried out by electroless plating techniques or by electroplatingtechniques as is known in the art. Preferably, by way of non-limitingexample, electroplating is carried out to form bump precursor button 134as a discrete structure that is spaced-apart from any closestneighboring bump precursors. Accordingly, bump precursor button 134 mayhave a curvilinear perimeter (not pictured) and a curvilinear verticalprofile. Alternatively, a plating film may be blanket formed andsubsequently patterned into substantially discrete bump precursorstructures by a process such as an etch. Accordingly, the patterned bumpprecursor structure may have a rectilinear perimeter (not pictured) anda rectilinear vertical profile (also not pictured). In any event, bumpprecursor button 134 or a patterned bump precursor structure (notdepicted) may be selected from a solder composition that facilitatesembodiments.

Bump precursor button 134 may be a tin-lead solder. In selectedembodiments, bump precursor button 134 is a tin-lead solder compositionsuch as Sn97Pb. A tin-lead solder composition that may be used with asubstrate that is to be flip-chip mounted over semiconductor structure10 is a Sn37Pb composition. In any event, bump precursor button 134 maybe a tin-lead solder comprising Sn_(x) Pb wherein x+y total 1, andwherein x is in a range from about 0.3 to about 0.99. Preferably, thebump precursor button 134 is a tin-lead solder composition of Sn97Pb,and substrate solder for forming the flip-chip bond is a tin-lead soldercomposition of Sn37Pb. Copper stud 132 acts as a significant tinabsorber, particularly for Sn37Pb from a flip-chip solder that willmingle with the solder ball of semiconductor structure 110.

FIG. 14 illustrates further processing in which the metal layers 126 and128 are removed substantially everywhere except directly under bumpprecursor button 134. Second mask 130 may be simultaneously removed, orit may be preliminarily or subsequently removed such as by wet strippingor by ashing. Removal of lateral portions of the metal layers 126 and128 may be carried out by a wet etch that is substantially selective tothe electrically conductive bump precursor button 134, and to thepatterned passivation layer 120 and the patterned nitride layer 118.Although some undercutting 136 into the metal layers 126 and 128 andinto copper stud 132 beneath bump precursor button 34 may be desirable,it may be balanced against risking a total slumping of the solder duringreflow. In one embodiment, undercutting 136 may be in a range from about0.5 microns to about 6 microns, preferably about 3 microns.

FIG. 15 illustrates further processing in which the bump precursorbutton 134 has been reflowed into a solder ball 138 that has beendimensionally limited by the metallurgy of the metal layers 126 and 128and by the degree of undercutting as set forth herein. Hence the BLM ofan embodiment may cause sufficient wetting of solder ball 138 overcopper stud 132 to form a solder ball 138 that has a preferred shape andheight. In selected embodiments, the vertically measured diameter ofsolder ball 138 may be in a range from about 50 microns to about 200microns. In another embodiment, the major vertical dimension of bumpprecursor button 34 is about 60 microns before it is reflowed, and it isabout 100 microns after it is reflowed.

The eccentricity of solder ball 138 may be in a range from about 0.5 toabout 1.2. A lower eccentricity may be preferred where the pitch of agiven ball array would lead to a bridging problem between neighboringballs during reflow or during reflow flip-chip mounting. Eccentricitymay be controlled by solder ball amount and solder ball wettingproperties in relation to copper metal second layer 128 and copper stud132.

Because some intermetallic material may form between the solder ball 138and metallization 114, the metal layers 126, 128 and 132 act to preventexcessive intermetallic formation or to resist tin migration towardmetallization 114. FIG. 16 illustrates an intermetallic zone 140, in anarbitrary shape and size, that may form under ordinary processingconditions according to an embodiment. A Sn37Pb solder ball 142 from aflip chip 144 is depicted as having collapsed over solder ball 138 andsignificant tin migration from both solder balls 138 and 142 has actedwith copper stud 132 to form intemetallic zone 140.

With the presence of copper stud 132, eventually, intermetallic zone 140may grow to a size and shape that acts as a barrier to further tinmigration. In other words, intermetallic zone 140 substantially isolatescopper stud 132 from solder ball 138. More generally, an intermetalliczone may form, whether it is in semiconductor structure 10 orsemiconductor structure 110, to substantially isolate migrating tin in asolder ball from the metallization such as a copper pad or a level suchas M6. Where the metallurgy of solder ball 138 is Sn_(x) Pb_(y) or thelike, a copper-tin intermetallic zone 140 may form that may berestricted by the BLM configuration according to embodiments set forthherein.

The combination of semiconductor structure 110 and flip chip 144 mayconstitute a system according to an embodiment. The system may compriseany electrical device that employs flip-chip technology. Similarly, thesemiconductor structure 10 depicted in FIG. 9 may also be part of asystem. Where either of semiconductor structures 10 or 110 comprise anelectrical device, it may comprises a chip-scale package. In anotherembodiment, the flip chip 144 may comprise a chip-scale package. In yetanother embodiment, both the electrical device and the flip chipcomprise chip-scale packages. In one embodiment, the flip-chip 144comprises a solder ball 142 having a composition of about Sn37Pb, andthe electrically conductive bump that may be either solder ball 38 or138 may comprise a solder having a composition of about Sn97Pb.

The following is an example of a process flow embodiment for the thirdgeneral embodiment. Reference may be made to FIGS. 12-16. A substrate112 containing an M6 metallization and a metallization 114 bond pad isprovided. Substrate 112 contains a silicon oxide ILD material as isknown in the art. A patterned passivation layer 120 and a patternednitride layer 118 are formed over substrate 112 and metallization 114.Patterned passivation layer 120 and patterned nitride layer 118 layerare formed according to known technique and as set forth herein.

A metal first layer 126 is formed by PVD of Ti over substrate 112 andstructures supported thereon. Metal first layer 126 is about 2,000 Åthick and is under a compressive stress. Next, a copper metal secondlayer 128 is formed by PVD over metal first layer 126. Copper metalsecond layer 128 is sputtered under conditions to impart a compressivestress therein. Copper metal second layer 128 is about 2,000 Å thick. Asecond mask 130 is formed from photoresist material that is spun on,cured, exposed, and patterned. Thereafter, a copper stud 132 iselectroplated to a thickness of about 10 microns.

After the formation of the three metal layers 126, 128 and 132, anelectroplating solution that has tin and lead in a Sn97Pb proportion isapplied over substrate 112 to form a bump precursor button 134. Etchingis carried out similar to the first and second general embodimentexamples to achieve an undercut 136 of about 3 microns. Thereafter, bumpprecursor button 134 is reflowed to form a solder ball 138. Flip-chipprocessing is then carried out in which a flip chip 144 is imposed oversemiconductor structure 110 and the solder ball 142 of flip-chip 144,comprising Sn37Pb, is reflowed over solder ball 138. Under these andsubsequent processing and test conditions, an intermetallic zone 140forms out of tin and copper that substantially halts tin migrationtoward metallization 114.

FIG. 17 is a process flow diagram of an embodiment. The process 1700includes forming 1710 a metal first layer over a metallization as setforth herein. Processing continues by forming 1720 a metal second layerover the metal first layer. According to one embodiment, a metal thirdlayer is formed 1730 over the metal second layer. Where metal secondlayer is copper, metal third layer is a refractory metal layer.Contrariwise, where metal second layer is a refractory metal, metalthird layer is copper. According to another embodiment, a copper stud isplated 1740 over metal second layer. In this embodiment, metal secondlayer is also copper that is sputtered. Finally, an electricallyconductive bump is formed 1750 as set forth herein. Additionally, a flipchip may be bonded to the electrically conductive bump.

It will be readily understood to those skilled in the art that variousother changes in the details, material, and arrangements of the partsand method stages which have been described and illustrated in order toexplain the nature of this invention may be made without departing fromthe principles and scope of the invention as expressed in the subjoinedclaims.

What is claimed is:
 1. A process of forming an integrated circuit devicecomprising: forming a metal pad over a substrate; forming a metaladhesion first layer above and on the metal pad, the metal first layercomprising TiW and having a thickness up to 4,000 Ångstrom (Å); forminga metal second layer above and on the metal adhesion first layer;forming a metal stud third layer above and on the metal second layer;forming a solder bump above and on the metal third layer, wherein theforming the metal second layer and the forming the metal third layercomprises sputtering a copper metal second layer over the metal adhesionfirst layer under conditions to impart a compressive stress therein; andplating a copper stud through a mask that is disposed over the metalsecond layer.
 2. The process of claim 1, wherein the metal second layercomprises copper.
 3. The process of claim 1, further comprising formingan intermetallic layer between the metal stud and the solder bump,wherein the intermetallic layer includes tin.
 4. The process of claim 1,wherein forming the metal adhesion first layer includes forming a metaladhesion first layer including a metal chosen from a group consisting ofTi, W, and Cr.
 5. The process of claim 1, wherein forming the metaladhesion first layer includes forming a metal adhesion first layer to athickness between about 500 Ångstrom (Å) and 4000 Ångstrom (Å).
 6. Theprocess of claim 1, wherein forming the metal stud includes forming ametal stud to a thickness between 5 micrometer (μm) and 15 μm.
 7. Theprocess of claim 1, wherein forming the metal stud includes forming ametal stud to a thickness of about 10 μm.